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chapter 1 revision questions and answers

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EX1.1 3/2 exp 2 g i E n BT kT ⎛ ⎞ − = ⎜ ⎟ ⎝ ⎠ GaAs: ( )( ) ( )( ) 3/2 14 6 1.4 2.1 10 300 exp 2 86 10 300 i n − ⎛ ⎞ − = × ⎜ ⎟ × ⎝ ⎠ or 6 3 1.8 10 i n cm� ... � = × Ge: ( )( ) ( )( ) 3/2 13 6 0.66 1.66 10 300 exp 2 86 10 300 i n − ⎛ ⎞ − = × ⎜ ⎟ × ⎝ ⎠ or 13 3 2.40 10 i n cm− = × EX1.2 (a) majority carrier: holes, 17 3 10 o p cm− = minority carrier: electrons, ( )2 10 2 3 3 17 1.5 10 2.25 10 10 i o o n n c p − × == = × m (b) majority carrier: electrons, cm 15 3 5 10 o n − = × minority carrier: holes, ( )2 10 2 4 3 15 1.5 10 4.5 10 5 10 i o o n p c n − × == =× × m EX1.3 For n-type, drift current density J ≅ e n μn E or ( )( )( ) 19 16 200 1.6 10 7000 10 E − = × which yields E 17.9 / = V cm EX1.4 Diffusion current density due to holes: ( ) 16 1 10 exp p p p p p dp J eD dx x eD L L = − ⎛⎞ ⎛ − − = − ⎜⎟ ⎜ ⎝⎠ ⎝ ⎞ ⎟ ⎟ ⎠ (a) At x = 0 ( )( )( ) 19 16 2 3 1.6 10 10 10 16 / 10 p J A cm − − × = = (b) At 3 x 10 cm − = 3 2 3 10 16exp 5.89 / 10 p J A cm − − ⎛ ⎞ − = = ⎜ ⎟ ⎝ ⎠ EX1.5 ( ) ( )( ) ( ) 16 17 2 2 6 10 10 ln 0.026 ln 1.8 10 a d bi T i N N V V n ⎡ ⎤ ⎡ ⎤ = = ⎢ ⎥ ⎢ ⎥ ⎢ ⎥ ⎣ ⎦ × ⎣ ⎦ or 1.23 V V [Show More]

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